MRF374A Ver la hoja de datos (PDF) - Motorola => Freescale
Número de pieza
componentes Descripción
Lista de partido
MRF374A Datasheet PDF : 12 Pages
| |||
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF374A/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in
28/32 volt transmitter equipment.
• Typical Two–Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 130 Watts PEP
Power Gain — 17.3 dB
Efficiency — 41%
IMD — –32.5 dBc
• 100% Tested for Load Mismatch Stress at All Phase Angles with 10:1
VSWR @ 32 Vdc, 860 MHz, 130 Watts, f1 = 857 MHz, f2 = 863 MHz
• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Differential Large–Signal Impedance Parameters
MRF374A
470 – 860 MHz, 130 W, 32 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375F–04, STYLE 1
NI–650
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
70
– 0.5, +15
302
1.72
– 65 to +150
200
Class
1 (Minimum)
M2 (Minimum)
Max
0.58
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MMoOtoTroOla,RInOc.L2A00R3 F DEVICE DATA For More Information On This Product,
Go to: www.freescale.com
MRF374A
1
Share Link: 