HB52F649E1-75B Ver la hoja de datos (PDF) - Elpida Memory, Inc

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HB52F649E1-75B

512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC133SDRAM

Elpida Memory, Inc 

HB52F649E1-75B

512 MB Registered SDRAM DIMM

64-Mword × 72-bit, 133 MHz Memory Bus, 1-Bank Module

(18 pcs of 64 M × 4 Components)

PC133SDRAM

E0021H20 (Ver. 2.0)

Aug. 20, 2001 (K)

Description

The HB52F649E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed

as an optimized main memory solution for 8-byte processor applications. The HB52F649E1 is a 64M × 72 ×

1-bank Synchronous Dynamic RAM Registered Module, mounted 18 pieces of 256-Mbit SDRAM

(HM5225405BTT) sealed in TSOP package, 1 piece of PLL clock driver, 3 pieces of register driver and 1

piece of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the HB52F649E1 is 168-pin socket

type package (dual lead out). Therefore, the HB52F649E1 makes high density mounting possible without

surface mount technology. The HB52F649E1 provides common data inputs and outputs. Decoupling

capacitors are mounted beside each TSOP on the module board.

Features

• Fully compatible with : JEDEC standard outline 8-byte DIMM

• 168-pin socket type package (dual lead out)

 Outline: 133.35 mm (Length) × 43.18 mm (Height) × 4.00 mm (Thickness)

 Lead pitch: 1.27 mm

• 3.3 V power supply

• Clock frequency: 133 MHz (max)

• LVTTL interface

• Data bus width: × 72 ECC

• Single pulsed RAS

• 4 Banks can operates simultaneously and independently

• Burst read/write operation and burst read/single write operation capability

• Programmable burst length: 1/2/4/8

• 2 variations of burst sequence

 Sequential

 Interleave

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

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