MSM6889GS-K Ver la hoja de datos (PDF) - Oki Electric Industry
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MSM6889GS-K Datasheet PDF : 21 Pages
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¡ Semiconductor
FUNCTIONAL DESCRIPTION AND APPLICATION
Resistance Hybrid Condition (Ideal Condition)
MSM6889
600 W : 600 W C1
RL VT VR
2.2 mF
VT1,VR1
3 AIN+ +
4 AIN– –
R3 2 GAR
R1
600 W
R2
VT2,VR2
+
AO
VAO
5
–
R2,R3 ≥ 20 kW
Figure 2
C1 is an ignorable impedance in the voice frequency band; therefore, if a line transformer and
phone line impedance are ideal (RL = 600 W pure resistance), the signal levels at each point are
as shown below.
VT, VR
VT1, VR1
VAO
VT2
VR2
: Transmit at 2W on phone line, receive signal level (balanced)
: Transmit at pin 3 (AIN+), receive signal level (unbalanced)
: Transmit signal level at pin 5 (AO) (unbalanced)
: Leaking of transmit signal into receive circuit (unbalanced)
: Receive signal level of the device (unbalanced)
1) VT = VT1 = 1/2 ¥ VAO
The transmit signal level (voltage) on phone line is half the level at the output pin (AO) of the
device. (600 W : a 600 W line transformer is used)
2) VR1 = VR
3)
VT2 =
VT1 ¥ (1+
R3
R2
)
+
VAO
¥
(–
R3
R2
)
=
1
2
VAO
¥
(1+
R3
R2
)
–
VAO
¥
R3 =
R2
1
2
VAO ¥
(1–
R3
R2
)
Then, where R2 = R3 (e.g., 51 kW), VT2 = 0.
This means that the transmit signal is no longer leaking into the receive circuit.
4)
VR2 =
VR1 ¥ (1+
R3
R2
) , where R2 = R3, VR2 =
2 ¥ VR1 =
2 ¥ VR
12/21
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