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MTP2N50E

TMOS E-FET Power Field Effect Transistor

Motorola => Freescale 

MTP2N50E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

500

—

—

689

—

Vdc

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 500 Vdc, VGS = 0 Vdc)

(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

IDSS

IGSS

µAdc

—

—

10

—

—

100

—

—

100

nAdc

VGS(th)

2.0

3.0

4.0

Vdc

—

7.1

—

mV/°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.0 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 2.0 Adc)

(ID = 1.0 Adc, TJ = 125°C)

Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 250 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 400 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 2.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

—

2.7

4.0

Ohm

Vdc

—

5.9

9.6

—

—

8.4

1.0

1.6

—

mhos

—

323

450

pF

—

45

60

—

9.0

20

—

8.0

16

ns

—

6.0

12

—

16

32

—

10

20

—

11

15

nC

—

2.0

—

—

5.4

—

—

5.1

—

Vdc

—

0.82

1.6

—

0.69

—

Reverse Recovery Time

(See Figure 14)

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

trr

ta

tb

QRR

LD

—

334

—

ns

—

62

—

—

272

—

—

0.985

—

µC

—

4.5

—

nH

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

—

7.5

—

nH

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

2

Motorola TMOS Power MOSFET Transistor Device Data

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