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MTP3N25E

TMOS E-FET Power Field Effect Transistor

Motorola => Freescale 

6

TJ = 25°C

5

4

3

TYPICAL ELECTRICAL CHARACTERISTICS

VGS = 10 V

7V

6V

6

VDS ≥ 10 V

5

4

3

MTP3N25E

TJ = –55°C

25°C

100°C

2

5V

1

4V

0

0 1 2 3 4 5 6 7 8 9 10

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

2

1

0

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

3.2

VGS = 10 V

2.8

2.4

2.0

TJ = 100°C

1.6

1.2

25°C

0.8

– 55°C

0.4

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

1.7

TJ = 25°C

1.6

1.5

1.4

1.3

VGS = 10 V

1.2

1.1

15 V

1.0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

2.0

VGS = 10 V

ID = 1.5 A

1.6

100

VGS = 0 V

TJ = 125°C

100°C

1.2

10

25°C

0.8

0.4

–50 –25

0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

1

0

50

100

150

200

250

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

Motorola TMOS Power MOSFET Transistor Device Data

3

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