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EMIF02-600 Ver la hoja de datos (PDF) - STMicroelectronics

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EMIF02-600 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
EMIF02-600FU7
Fig A5 : Remaining voltage at both stages S1 (Vin) and S2 (Vout) during ESD surge
a) Positive surge
b) Negative surge
Please note that the EMIF02-600FU7 is not only acting for positive ESD surges but also for negative ones. For these kind
of disturbances it clamps close to ground voltage as shown in Fig. A5b.
NOTE: DYNAMIC RESISTANCE MEASUREMENT
As the value of the dynamic resistance remains stable for a
surge duration lower than 20µs, the 2.5µs rectangular surge
is well adapted. In addition both rise and fall times are
optimized to avoid any parasitic phenomenon during the
measurement of Rd.
Fig A6 : Rd measurement current wave
I
IPP
t
2 µs
2.5 µs
2.5µs duration measurement wave
CROSSTALK BEHAVIOR
1- Crosstalk phenomena
Fig A7 : Crosstalk phenomena
RG1
line 1
VG1
RG2
line 2
RL1
α VG1 β VG2
VG2
RL2
α VG2 β VG1
DRIVERS
RECEIVERS
The crosstalk phenomena are due to the coupling between 2 lines. The coupling factor ( β12 or β21 ) increases when the
gap across lines decreases, particularly in silicon dice. In the example above the expected signal on load RL2 is α2VG2, in
fact the real voltage at this point has got an extra value β21VG1. This part of the VG1 signal represents the effect of the
crosstalk phenomenon of the line 1 on the line 2. This phenomenon has to be taken into account when the drivers impose
fast digital data or high frequency analog signals in the disturbing line. The perturbed line will be more affected if it works
with low voltage signal or high load impedance (few k). The following chapters give the value of both digital and analog
crosstalk.
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