NBB-500-E Ver la hoja de datos (PDF) - RF Micro Devices

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Lista de partido

NBB-500-E

CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz

RF Micro Devices 

NBB-500

Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector

loss variations. The insertion losses of the evaluation board and connectors are as follows:

1GHz to 4GHz=-0.06dB

5GHz to 9GHz=-0.22dB

10GHz to 14GHz=-0.50dB

15GHz to 20GHz=-1.08dB

S11 versus Frequency, Over Temperature

0.0

-5.0

-10.0

-15.0

-20.0

-25.0

-30.0

-35.0

+25 C

-40 C

+85 C

-40.0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

Frequency (GHz)

S21 versus Frequency, Over Temperature

30.0

20.0

10.0

0.0

-10.0

-20.0

-30.0

+25 C

-40 C

+85 C

-40.0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

Frequency (GHz)

S12 versus Frequency, Over Temperature

0.0

-5.0

-10.0

-15.0

-20.0

-25.0

-30.0

-35.0

+25 C

-40 C

+85 C

-40.0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

Frequency (GHz)

S22 versus Frequency, Over Temperature

0.0

-5.0

-10.0

-15.0

-20.0

-25.0

-30.0

-35.0

+25 C

-40 C

+85 C

-40.0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

Frequency (GHz)

4-58

Rev A4 030912

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