NCP1027P065G(2015) Ver la hoja de datos (PDF) - ON Semiconductor
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NCP1027P065G
(Rev.:2015)
(Rev.:2015)
ON Semiconductor
NCP1027P065G Datasheet PDF : 30 Pages
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NCP1027
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power Supply Voltage on all Pins, Except Pin 5 (Drain)
Drain Voltage
VCC
−0.3 to 10
V
BVdss
−0.3 to 700
V
Drain Current Peak During Transformer Saturation
IDS(pk)
1.8
A
Maximum Current into Pin 1 when Activating the 8.7 V Active Clamp
Thermal Resistance, Junction−to−Air – PDIP7
Thermal Resistance, Junction−to−Air – PDIP7 with 1.0 cm@ of 35 m Copper Area
Maximum Junction Temperature
Storage Temperature Range
I_VCC
RqJA
RqJA
TJMAX
−
15
100
75
150
−60 to +150
mA
°C/W
°C/W
°C
°C
ESD Capability, Human Body Model (HBM) (All Pins Except HV)
−
2.0
kV
ESD Capability, Machine Model (MM)
−
200
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per JEDEC JESD22−A114−F.
Machine Model Method 200 V per JEDEC JESD22−A115−A.
2. This device contains latchup protection and exceeds 100 mA per JEDEC Standard JESD78.
ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = 0°C to +125°C, Max TJ = 150°C,
VCC = 8.0 V, unless otherwise noted.)
Characteristic
Pin
Symbol
Min
Typ Max Unit
SUPPLY SECTION AND VCC MANAGEMENT
VCC Increasing Level at which the Switcher Starts to Operate
1
VCC Decreasing Level at which the Switcher Stops Operation
1
Hysteresis between VCCON and VCC(min)
−
Offset Voltage above VCCON at which the Internal Clamp Activates
1
VCC Voltage at which the Internal Latch is Reset
1
Internal IC Consumption, MOSFET Switching at 65 kHz or 100 kHz
1
VCCON
VCC(min)
VCChyste
VCCclamp
VCCreset
ICC1
7.9
8.5
8.9
V
6.7
7.2
7.9
V
−
1.2
−
V
140
200
300
mV
−
4.0
−
V
−
1.4
1.9
mA
POWER SWITCH CIRCUIT
Power Switch Circuit On−State Resistance
NCP1027 (Id = 100 mA)
TJ = 25°C
TJ = 125°C
5
RDS(on)
W
−
−
5.8
7.0
9.8
11
Power Switch Circuit and Startup Breakdown Voltage
(ID(off) = 120 mA, TJ = 25°C)
Power Switch and Startup Breakdown Voltage Off−State
Leakage Current
TJ = 25°C (Vds = 700 V)
TJ = 125°C (Vds = 700 V)
5
BVdss
700
−
−
V
Idss(OFF)
mA
5
5
−
−
50
−
−
30
Switching Characteristics (RL = 50 W, Vds Set for
Idrain = 0.7 x Ilim)
Turn−on Time (90%−10%)
Turn−off Time (10%−90%)
INTERNAL STARTUP CURRENT SOURCE
5
5
ton
toff
−
35
−
ns
−
35
−
ns
High−Voltage Current Source, VCC = VCCON – 200 mV
High−Voltage Current Source, VCC = 0
VCC Transition Level for IC1 to IC2 Toggling Point
1
IC1
3.5
6.0
8.0
mA
1
IC2
350
650
900
mA
1
VCCTh
−
1.3
−
V
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