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NCV8674(2008) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Lista de partido
NCV8674
(Rev.:2008)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NCV8674 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
VIN
Bias Current
Generators
1.3 V
Reference
+
Error
Amp
-
NCV8674
VOUT
Thermal
Shutdown
GND
Figure 1. Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
Symbol
Function
1
VIN
Unregulated input voltage; (VOUT + 0.5 V) to 45 V.
2
GND
Ground; substrate.
3
VOUT
Regulated output voltage; collector of the internal PNP pass transistor.
TAB
GND
Ground; substrate and best thermal connection to the die.
OPERATING RANGE
Pin Symbol, Parameter
Symbol
Min
Max
Unit
VIN, DC Input Operating Voltage
Junction Temperature Operating Range
VIN
VOUT + 0.5 V
+45
V
TJ
40
+150
_C
MAXIMUM RATINGS
Rating
Symbol
Min
Max
Unit
VIN, DC Voltage
VOUT, DC Voltage
Storage Temperature
ESD Capability, Human Body Model (Note 1)
ESD Capability, Machine Model (Note 1)
VIN
VOUT
Tstg
VESDHB
VESDMIM
42
0.3
55
4000
200
+45
V
+16
V
+150
_C
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AECQ100002 (EIA/JESD22A 114C)
ESD MM tested per AECQ100003 (EIA/JESD22A 115C)
Thermal Resistance
Parameter
JunctiontoAmbient(Note 2)
JunctiontoCase
2. 1 oz., 1 in2 copper area.
Symbol
Min
Max
Unit
RqJA
RqJC
40
°C/W
4.0
°C/W
http://onsemi.com
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