NE71300M Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza

componentes Descripción

Lista de partido

NE71300M

LOW NOISE L TO K-BAND GaAs MESFET

NEC => Renesas Technology 

NE71300

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

SYMBOLS

PARAMETERS

UNITS RATINGS

VDS

Drain to Source Voltage

V

5

VGD

Gate to Drain Voltage

V

-6

VGS

Gate to Source Voltage

V

-5

IDS

Drain Current

mA

IDSS

PIN

RF Input (CW)

dBm

+15

TCH

Channel Temperature

°C

175

TSTG

Storage Temperature

°C

-65 to +175

PT2

Total Power Dissipation

mW

400

Notes:

1. Operation in excess of any one of these parameters may result in

permanent damage.

2. With chip mounted on a copper heat sink.

TYPICAL PERFORMANCE CURVES (TA = 25 °C)

POWER DERATING CURVE

400

300

200

100

0

50

100

150

200

Ambient Temperature, TA (°C)

DRAIN CURRENT vs.

GATE TO SOURCE VOLTAGE

50

VDS = 3 V

40

30

20

10

0

-2.0

-1.0

0

Gate to Source Voltage, VGS (V)

DC PERFORMANCE

VGS = 0 V

40

-0.2 V

30

20

-0.4 V

10

-0.6 V

0

1

2

3

4

5

Drain Voltage, VDS (V)

Share Link: