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NJG1103F1

LOW NOISE AMPLIFIER GaAs MMIC

Japan Radio Corporation  

NJG1102F1

nABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain Voltage

Input Power

Power Dissipation

Operating Temperature

Storage Temperature

SYMBOL

VDD

Pin

PD

Topr

Tstg

CONDITIONS

VDD=2.7V

(Ta=25°C, Zs=Zl=50Ω)

RATINGS UNITS

5.0

V

+10

dBm

150

mW

-40~+85

°C

-55~+125

°C

nELECTRICAL CHARACTERISTICS

PARAMETER

Operating Frequency

Drain Voltage

Operating Current

Small Signal Gain

Gain Flatness

Noise Figure

Pout at 1dB Gain

Compression point

Input 3rd Order

Intercept Point

RFIN Port VSWR

RFOUT Port VSWR

SYMBOL

freq

VDD

IDD

Gain

Gflat

NF

P-1dB

IIP3

VSWRi

VSWRo

(VDD=2.7V,f=820MHz,Ta=+25°C, Zs=Zl=50Ω)

CONDITIONS

MIN TYP MAX UNITS

800 820 1000 MHz

2.5 2.7 4.5

V

RF OFF

-

3.0 4.0

mA

15.0 17.0 19.0

dB

fRF=810~885MHz

-

0.5 1.0

dB

-

1.4 1.6

dB

-3.0 +1.0

-

dBm

f=820.0~820.1MHz

-7.0 -3.0

-

dBm

-

2.0 3.0

-

2.0 3.0

-2-

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