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BS616UV8021FC

Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

Brilliance Semiconductor 

BSI

BS616UV8021

„ DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC)

PARAMETER

NAME

VIL

VIH

PARAMETER

Guaranteed Input Low

Voltage (2)

Guaranteed Input High

Voltage (2)

TEST CONDITIONS

Vcc=2.0V

Vcc=2.0V

IIL

Input Leakage Current Vcc = Max, VIN= 0V to Vcc

IOL

Output Leakage Current

Vcc = Max, CE1 = VIH, or CE2 =ViL, or

OE = VIH, VI/O = 0V toVcc

MIN. TYP.(1) MAX.

-0.5

--

0.6

1.4

--

Vcc+0.2

--

--

1

--

--

1

UNITS

V

V

uA

uA

VOL

Output Low Voltage

Vcc= max, IOL= 1mA

Vcc=2.0V

--

--

0.4

V

VOH

Output High Voltage

Vcc= Min, IOH= -0.5mA

Vcc=2.0V

1.6

--

--

V

ICC

Operating Power Supply Vcc= max, CE1=VILand CE2 = VIH,

Current

IDQ = 0mA, F =Fmax (3)

Vcc=2.0V

--

--

20

mA

ICCSB

Standby CurrentT- TL

Vcc= max, CE1 = VIH or CE2 =VIL,

IDQ = 0mA

Vcc=2.0V

--

--

0.6

mA

Vcc= max,CE1ЊVcc-0.2V,

I CCSB1

Standby CurrentC- MOS or CE2Љ0.2V;VINЊVcc - 0.2V or

Vcc=2.0V

--

0.6

15

uA

VIN Љ 0.2V

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/ tRC .

R0201-BS616UV8021

4

Revision 2.2

April 2001

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