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BS616LV8021AI-70

Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

Brilliance Semiconductor 

BSI

BS616LV8021

„ DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )

PARAMETER

NAME

PARAMETER

VIL

Guaranteed Input Low

Voltage(2)

Guaranteed Input High

VIH

Voltage(2)

TEST CONDITIONS

Vcc=3V

Vcc=3V

I IL

Input Leakage Current Vcc = Max, VIN = 0V to Vcc

I OL

VOL

VOH

I CC

Output Leakage Current

Vcc = Max, CE1 = VIH , or CE2 =ViL, or

OE = VIH, VI/O = 0V to Vcc

Output Low Voltage

Vcc= max, IOL= 2mA

Vcc=3V

Output High Voltage

Vcc= Min, IOH = -1mA

Vcc=3V

Operating Power Supply Vcc=max, CE1=VIL and CE2= VIH,

Current

IDQ = 0mA, F =Fmax (3)

Vcc=3V

I CCSB

Standby Current-TTL

Vcc= max, CE1=VIH or CE2 = VIL,

IDQ = 0mA

Vcc=3V

MIN. TYP.(1) MAX. UNITS

-0.5

--

0.8

V

2.0

-- Vcc+0.2 V

--

--

1

uA

--

--

1

uA

--

--

0.4

V

2.4

--

--

V

--

--

20

mA

--

--

1

mA

Vcc= max,CE1Њ Vcc-0.2V, or

I CCSB1

Standby Current-CMOS CE2 Љ 0.2V; VIN Њ Vcc - 0.2V

Vcc=3V

--

1

16

uA

or VIN Љ 0.2V

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/ tRC .

R0201-BS616LV8021

4

Revision 2.3

April 2002

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