GLT4160M04E-60J3(2000) Ver la hoja de datos (PDF) - G-Link Technology
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GLT4160M04E-60J3 Datasheet PDF : 21 Pages
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G-LINK
GLT4160M04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Jan 2000 (Rev. 1.3)
AC Characteristics
Parameter
Data Set-Up Time
Data Hold Time
Data Hold Time Referenced to RAS
RAS to WE Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
CAS Precharge to WE Delay
RAS to CAS Precharge Time
CAS precharge time ( CAS Before RAS
counter test cycle)
Access Time from CAS Precharge
EDO Page Mode Cycle Time
EDO Page Mode Read-Modify-Write Cycle Time
CAS Precharge Time (EDO Page Mode)
RAS Pulse Width (EDO Page Mode Only)
RAS Hold Time from CAS precharge
Access Time from OE
OE to Data Delay Time
OE to Output Low-Z
OE to Output High-Z
WE to Data Delay
OE Command Hold Time
Data Output Hold after CAS low
RAS to Output High-Z
WE to Output High-Z
OE to CAS Hold Time
CAS Hold Time to OE
OE Precharge Time
WE Puts width (EDO mixed read write cycle)
CAS Set-Up Time for CAS -before- RAS Cycle
Symbol
tDS
tDH
tDHR
tRWD
tCWD
tAWD
tCPWD
tRPC
tCPT
tCPA
tPC
tPRWC
tCP
tRASP
tRHCP
tOEA
tOED
tOLZ
tOEZ
tWED
tOEH
tDOH
tREZ
tWEZ
tOCH
tCHO
tOEP
tWPE
tCSR
60
Min. Max.
0
10
45
79
34
49
54
5
20
70
Min. Max.
0
15
50
94
44
59
64
5
25
35
40
25
30
56
71
10
10
60 100k 70 100k
35
40
15
0
20
15
20
0
0
3
15
3
20
15
20
15
20
5
5
3
15
3
20
3
15
3
20
5
5
5
5
5
5
5
5
5
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
8
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Santa Clara, CA 95051, U.S.A.
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G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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