P4C1023-55CM Ver la hoja de datos (PDF) - Semiconductor Corporation

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P4C1023-55CM

LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM

Semiconductor Corporation 

P4C1023/P4C1023L

READ CYCLE NO. 1 (OE CONTROLLED)(1)

READ CYCLE NO. 2 (ADDRESS CONTROLLED)

READ CYCLE NO. 3 (CE CONTROLLED)

Notes:

1. WE is HIGH for READ cycle.

2. CE and OE are LOW for READ cycle.

3. ADDRESS must be valid prior to, or coincident with later of

CE transition LOW.

4. Transition is measured ± 200 mV from steady state voltage prior

to change, with loading as specified in Figure 1. This parameter

is sampled and not 100% tested.

5. READ Cycle Time is measured from the last valid address to the

first transitioning address.

Document # SRAM126 REV OR

Page 4 of 11

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