P4C150-10SC Ver la hoja de datos (PDF) - Semiconductor Corporation
Número de pieza
componentes Descripción
Lista de partido
P4C150-10SC Datasheet PDF : 11 Pages
| |||
P4C150
MAXIMUM RATINGS(1)
Symbol
Parameter
VCC
Power Supply Pin with
Respect to GND
VTERM
Terminal Voltage with
Respect to GND
(up to 7.0V)
TA
Operating Temperature
Value Unit
– 0.5 to +7 V
– 0.5 to
VCC +0.5
V
– 55 to +125 °C
Symbol Parameter
TBIAS
Temperature Under
Bias
TSTG
Storage Temperature
PT
Power Dissipation
IOUT
DC Output Current
Value Unit
– 55 to +125 °C
– 65 to +150 °C
1.0
W
50
mA
RECOMMENDED OPERATING
CONDITIONS
Grade(2)
Commercial
Ambient Temp
0°C to 70°C
Gnd
VCC
0V 5.0V ± 10%
Military
-55°C to +125°C 0V 5.0V ± 10%
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
Symbol Parameter
Conditions Typ. Unit
CIN
COUT
Input Capacitance VIN = 0V
Output Capacitance VOUT= 0V
5 pF
7 pF
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage (2)
Symbol
Parameter
VOH Output High Voltage
(TTL Load)
Test Conditions
IOH = –4 mA, VCC = Min.
P4C150
Unit
Min.
Max.
V
2.4
VOL Output Low Voltage
(TTL Load)
VIH Input High Voltage
VIL Input Low Voltage
ILI Input Leakage Current
IOL = +8 mA, VCC = Min
VCC = Max., VIN = GND to VCC
2.2
–0.5(3)
–5
0.4
V
VCC =+0.5 V
0.8
V
+5
µA
ILO Output Leakage Current
VCC = Max., CS = VIH, VOUT = GND to VCC
–5
+5
µA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature
Range
-10 -12 -15 -20 -25 -35 Unit
Commercial
130 130 120 115 100 N/A mA
ICC
Dynamic Operating Current
Military
N/A N/A 145 135 125 120 mA
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this
specification is not implied. Exposure to MAXIMUM rating condi-
tions for extended periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than – 3.0V and
– 100mA, respectively, are permissible for pulse widths up to 20ns.
4. This parameter is sampled and not 100% tested.
Document # SRAM105 REV A
Page 2 of 11
Share Link: 