GS71116AGP Ver la hoja de datos (PDF) - Giga Semiconductor

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GS71116AGP

64K x 16 1Mb Asynchronous SRAM

Giga Semiconductor 

GS71116ATP/J/U

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Supply Voltage

VDD

Input Voltage

VIN

Output Voltage

VOUT

Allowable power dissipation

PD

Storage temperature

TSTG

–0.5 to +4.6

V

–0.5 to VDD +0.5

V

(≤ 4.6 V max.)

–0.5 to VDD +0.5

V

(≤ 4.6 V max.)

0.7

W

–55 to 150

oC

Note:

Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended

Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.

Recommended Operating Conditions

Parameter

Symbol Min

Typ

Max

Unit

Supply Voltage for -7/-8/-10/-12

VDD

3.0

3.3

3.6

V

Input High Voltage

VIH

2.0

—

VDD +0.3

V

Input Low Voltage

VIL

–0.3

—

0.8

V

Ambient Temperature,

Commercial Range

TAc

0

—

70

oC

Ambient Temperature,

Industrial Range

TAI

–40

—

85

oC

Notes:

1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.

2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.

Capacitance

Parameter

Input Capacitance

Output Capacitance

Symbol

Test Condition

Max

Unit

CIN

VIN = 0 V

5

pF

COUT

VOUT = 0 V

7

pF

Notes:

1. Tested at TA = 25°C, f = 1 MHz

2. These parameters are sampled and are not 100% tested.

Rev: 1.07 12/2004

4/16

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2001, GSI Technology

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