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PCF5078T/F2

Power amplifier controller for GSM and PCN systems

Philips Electronics 

Philips Semiconductors

Power amplifier controller for GSM and

PCN systems

Product specification

PCF5078

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

VDD

Vn

In

Ptot

Tstg

Tamb

supply voltage

DC voltage on

pins VS2 and VS2

all other pins

DC current on any signal pin

total power dissipation

storage temperature

operating ambient temperature

MIN.

2.4

−3.0

−0.5

−10

−

−65

−40

MAX.

6.0

+6.0

+6.0

+10

315

+150

+85

UNIT

V

V

V

mA

mW

°C

°C

CHARACTERISTICS

VDD = 2.4 to 5 V; Tamb = −40 to +85 °C; see Fig.1; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

Supply

VDD

IDD(tot)

supply voltage

total supply current

Sensor input voltage

VI(n)

input voltage on pins VS1 and VS2

Bias current source

Ibias

detector diode bias current

TCbias

temperature coefficient of bias current

source

2.4

−

−3

no input signal;

Tamb = 25 °C; see Fig.7

VDD = 2.4 V

17

VDD = 5.0 V

21

−

Home position voltage

Vhome

TChome

internal home position voltage

Tamb = 25 °C

temperature coefficient of internal home

position voltage source

R3

resistor for internal home position

voltage

VI(VHOME) home position input voltage

Low pass filter for DAC signal (3rd-order Bessel)

f3dB

corner frequency

0.550

−

−

200

70

TYP.

3.6

−

−

28

33

0.07

0.600

−2.1

50

−

100

MAX. UNIT

5.0

V

6

mA

VDD

V

39

µA

45

µA

−

µA/K

0.650

−

V

mV/K

−

kΩ

1000(1) mV

130

kHz

1999 Apr 12

9

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