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IRFF9130 Datasheet PDF : 7 Pages
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IRFF9130
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
IRFF9130
-100
-100
-6.5
-26
±20
25
0.2
500
-55 to 150
300
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
VGS = 0V, ID = -250µA, (Figure 10)
VGS = VDS, ID = -250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V
VGS = ±20V
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
rDS(ON)
gfs
VGS = -10V, ID = -3A, (Figures 8, 9)
VDS ≥ ID(ON) x rDS(ON)MAX, ID = -3A,
(Figure 12)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
tf
VDD = 0.5 x Rated BVDSS, ID ≈ -6.5A, RG = 9.1Ω,
RL = 7.4Ω for BVDSS = -100V
RL =5.8Ω for BVDSS = -80V
(Figures 17, 18) MOSFET Switching Times are Es-
sentially Independent of Operating Temperature
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Qg(TOT)
Qgs
Qgd
VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated BVDSS,
IG(REF) = -1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
Input Capacitance
Output Capacitance
CISS
COSS
VGS = 0V, VDS = -25V, f = 1.0MHz, (Figure 11)
Reverse-Transfer Capacitance
CRSS
Internal Drain Inductance
Internal Source Inductance
LD
Measured From the
Modified MOSFET Sym-
Drain Lead, 5mm (0.2in) bol Showing the Internal
From Package to Center Devices
of Die
Inductances
D
LS
Measured From The
Source Lead, 5mm
LD
(0.2in) From Header to
Source Bonding Pad
G
LS
S
Junction to Case
Junction to Ambient
RθJC
RθJA
Typical Socket Mount
MIN
-100
-2.0
-
-
-6.5
-
-
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
-
-
V
-
-4.0
V
-
-25
µA
-
-250
µA
-
-
A
- ±100 nA
0.25 0.300 Ω
3.5
-
S
30
60
ns
70 140
ns
70 140
ns
70 140
ns
25
45
nC
13
-
nC
12
-
nC
500
-
pF
300
-
pF
100
-
pF
5.0
-
nH
15
-
nH
-
5.0 oC/W
-
175 oC/W
4-102
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