RCD080N25 Ver la hoja de datos (PDF) - ROHM Semiconductor
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RCD080N25 Datasheet PDF : 6 Pages
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Data Sheet
10V Drive Nch MOSFET
RCD080N25
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
0.75
0.9 2.3
0.65
(1)
(2)
(3) 2.3
0.5
1.0
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RCD080N25
Taping
TL
2500
Inner circuit
∗1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
250
V
VGSS
30
V
ID *3
8
A
IDP *1
32
A
IS *3
8
A
ISP *1
32
A
IAS *2
4
A
EAS *2
4.67
mJ
PD *4
20
W
Tch
150
C
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)*
* TC=25°C
* Limited only by maximum channel temperature allowed.
Limits
6.25
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 BODY DIODE
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1/5
2011.11 - Rev.A
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