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RF2312 Ver la hoja de datos (PDF) - RF Micro Devices

Número de pieza
componentes Descripción
Lista de partido
RF2312
RFMD
RF Micro Devices RFMD
RF2312 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
RF2312
Absolute Maximum Ratings
Parameter
Input RF Power
Output Load VSWR
Ambient Operating Temperature
Storage Temperature
Rating
+18
20:1
-40 to +85
-40 to +150
Unit
dBm
°C
°C
Parameter
Overall (50Ω)
Frequency Range
Gain
Noise Figure
Input VSWR
Specification
Min.
Typ.
Max.
DC to 2500
14.5
15.1
3.8
4.3
4.2
4.8
1.7:1
2:1
Output VSWR
1.4:1
2:1
Output IP3
Output IP3
Output IP3
Output P1dB
Output P1dB
Output P1dB
Saturated Output Power
Saturated Output Power
Saturated Output Power
Reverse Isolation
Thermal
ThetaJC
Mean Time To Failure
ThetaJC
Mean Time To Failure
Power Supply
Device Voltage (VD)
Operating Current Range
+40
+42
+33
+36
+30
+33
+21
+22
+20
+21
+17
+18.5
+23
+22.5
+20.5
20
114.9
2170
114.05
2170
5.5
5.0
40
100
120
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
°C/W
years
°C/W
years
V
V
mA
Condition
T=25°C, VCC=9V, Freq = 900 MHz,
RC=30Ω, 50Ω System, PIN=-4dBm
3dB Bandwidth
From 50MHz to 300MHz, -30 to +70 °C
From 300MHz to 1000MHz, -30 to +70 °C
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
At 100MHz
At 500MHz
At 900MHz
At 100MHz
At 500MHz
At 900MHz
At 100MHz
At 500MHz
At 900MHz
ICC=100mA, PDISS =0.555W, TAMB=85°C,
TJ = 149°C
No RF Input/Output
TAMB = +85°C
ICC=120mA, PDISS =0.702W, TAMB=85°C,
TJ = 165°C
No RF Input/Output
TAMB = +85°C
On pin 8, ICC=100mA
On pin 8, ICC=40mA
VCC=9.0V, RC=30Ω
3-2
Rev C6 051025

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