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RF3854

LOW NOISE, MULTI-MODE, QUAD-BAND, QUADRATURE MODULATOR AND PA DRIVER

RF Micro Devices 

RF3854

Parameter

General Conditions

Local Oscillator

LO HB Input Frequency

RF HB Output Frequency

Input Power

IQ Baseband Inputs

IQ Level

Min.

1710

1710

-6.0

Specification

Typ.

Max.

1910

1910

0.0

+3.0

1.2

Unit

MHz

MHz

dBm

VP-P

IQ Common Mode

1.2

V

Input Bandwidth 0.7

1.0

MHz

Baseband Filter Attenuation 20

dB

Output Performance with Modulated Baseband Inputs

W-CDMA Mode

Mode=Wideband FLOx2 (see Control Logic Truth Table for Mode Control

Settings)

Output Power

Maximum Output Power with

W-CDMA Modulated Signal*

High Power Mode

3

Medium Power Mode

-4

Gain Range

High Power Mode

Gain Step

High Power to Medium Power

Medium Power to Low Power

Out-of-Band Emission

Adjacent Channel Leakage Power

Ratio (ALCR)*

Channel Spacing

±5 MHz

±10 MHz

Error Vector Magnitude

RMS*

Output Noise

At FC±40MHz*

* Not tested in Production

6

dBm

-1

dBm

90

dB

±0.5

dB

TBD

dB

50

65

1.4

-152

-146

-146

dBc

dBc

%rms

dBc/Hz

dBc/Hz

Condition

8PSK

Input IQ signal driven differentially and in

quadrature.

At 20MHz offset

VCC=2.7V, T=+25°C, while meeting 48dBc

ALCR

GC = 2.0 V

GC = 1.5 V

Difference between output power at GC=2.0V

and GC=0.2V.

Gain step when switching between power

modes in either direction.

GC = 1.4 V

GC = TBD

3.84MHz relative to channel power

3.84MHz relative to channel power

3GPP W-CDMA

GC = 2.0 V

GC=2.0V to 1.5V

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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Rev A1 DS070313

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