RF3867PCK-411 Ver la hoja de datos (PDF) - RF Micro Devices

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Lista de partido

RF3867PCK-411

DUAL-CHANNEL, WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER

RF Micro Devices 

RF3867

Evaluation Board Schematic

700MHz to 1100MHz, 1500MHz to 2700MHz, and 3300MHz to 3800MHz

C3

VDD1

R3

C9

10 nF

C5

C8

L2 10 pF

L3

RF IN1

RF IN2

L4

20 19 18 17 16

1

15

2

14

3

13

4

12

5

11

6 7 8 9 10

50 Ω μstrip

50 Ω μstrip

J4

RF OUT1

J3

RF OUT2

C6

L1

C4

10 pF

R2

C1

10 nF

C2

VDD2

Component

High Band

Mid Band

Low Band

3300 MHz to 3800 MHz 1500 MHz to 2700 MHz 700 MHz to 1100 MHz

L1, L2 (nH)

1.5

12

56

L4, L3 (nH)

100 pF

100 pF

22

C5, C6 (pF)

12 nH

4.7 nH

100

C2, C3 (pF)

DNP

12

6.8

R2, R3 (Ω)

DNP

DNP

DNP

R1 (Ω)

0

0

0

See note 1

R2 and R3 are DNP for typical 90 mA per channel current draw. If R2 or R3 is added,

the channel IDD will increase. A 10 Ω R2 or R3 will raise the current of a channel

to achieve higher linearity.

Note 1: For low band add a series 6.8 nH inductor on RF IN, and a shunt 15 nH inductor on RF OUT.

Inductors should be placed as close as possible to the part.

Note 2: The topology of L3, L4, C5, and C6 in the mid and high bands. They must be as shown in the chart.

Rev A0 DS070808

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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