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RFP12P08 Datasheet PDF : 5 Pages
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RFP12P08, RFP12P10
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP12P08
-80
-80
RFP12P10
-100
-100
12
30
±20
75
0.6
-55 to 150
12
30
±20
75
0.6
-55 to 150
300
300
260
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFP12P08
BVDSS ID = 250µA, VGS = 0
RFP12P10
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V,
TC = 125oC
VGS = ±20V, VDS = 0
ID = 12A, VGS = -10V
ID = 12A, VGS = -10V, (Figures 6, 7)
ID ≈ 12A, VDD = 50V,
RG = 50Ω, RL = 4.1Ω, VGS = -10V
(Figure 10)
VGS = 0V, VDS = -25V, f = 1MHz
(Figure 9)
RFP12P08, RFP12P10
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = -12A
Diode Reverse Recovery Time
trr
ISD = -12A, dISD/dt = 100A/µs
NOTES:
2. Pulse Test: Pulse Width = ≤ 300µs Max, Duty Cycle ≤ 2%
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN
-80
-100
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
-
-
TYP MAX UNITS
-
-
V
-
-
V
-
-4
V
-
1
µA
-
25
µA
-
±100
nA
-
-3.6
V
-
0.300
Ω
18
60
ns
90
175
ns
144
275
ns
94
175
ns
-
1500
pF
-
700
pF
-
300
pF
-
1.67
oC/W
TYP MAX UNITS
-
1.4
V
200
-
ns
4-162
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