BDX67 Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Lista de partido
BDX67 Datasheet PDF : 5 Pages
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BDX67, A, B, C
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICBO
hFE
VCE(SAT)
VBE
VF
Cc
ton
toff
fhfe
Collector-Base Cutoff
Current
TCASE=25°C, VCB=100 V
-
-
1
BDX67B
TCASE=200°C, VCB=60 V
-
-
5
mA
TCASE=25°C, VCB=120 V
-
-
1
BDX67C
TCASE=200°C, VCB=70 V
-
-
5
DC Current Gain
VCE=3 V, IC=1 A
VCE=3 V, IC=10 A
VCE=3 V, IC=16 A
Collector-Emitter saturation
Voltage (*)
IC=10 A, IB=40 mA
Base-Emitter Voltage(1&2) VCE=3 V, IC=10 A
Diode forward voltage
IF=10 A
IE=0 A, VCB=10V
Switching characteristics
VCC=12V, IC=-10 A
IB1=- IB2=0.04 A
VCE=-3 V, IC=-5 A
- 5200 -
1000 -
-
-
- 4000 -
BDX67
BDX67A
BDX67B
-
-
2
V
BDX67C
BDX67
BDX67A
BDX67B
-
-
2,5
V
BDX67C
BDX67
BDX67A
BDX67B
-
2,5
-
V
BDX67C
BDX67
BDX67A
BDX67B
-
300
-
pF
BDX67C
BDX67
BDX67A
BDX67B
-
1
-
BDX67C
BDX67
µs
BDX67A
BDX67B
-
3.5
-
BDX67C
BDX67
BDX67A
-
BDX67B
50
- kHz
BDX67C
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
COMSET SEMICONDUCTORS
3/5
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