RJH60F7 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Lista de partido

RJH60F7

Silicon N Channel IGBT / High Speed Power Switching / TO-3P Package

Renesas Electronics 

Preliminary Datasheet

RJH60F7ADPK

Silicon N Channel IGBT

High Speed Power Switching

R07DS0237EJ0300

(Previous: REJ03G1837-0200)

Rev.3.00

Jan 05, 2011

Features

 Low collector to emitter saturation voltage

VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)

 Built in fast recovery diode in one package

 Trench gate and thin wafer technology

 High speed switching

tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)

Outline

RENESAS Package code: PRSS0004ZE-A

(Package name: TO-3P)

C

4

1

23

1. Gate

2. Collector

G

3. Emitter

4. Collector (Flange)

E

Absolute Maximum Ratings

Item

Collector to emitter voltage

Gate to emitter voltage

Collector current

Tc = 25°C

Tc = 100°C

Collector peak current

Collector to emitter diode forward peak current

Collector dissipation

Junction to case thermal impedance (IGBT)

Junction to case thermal impedance (Diode)

Junction temperature

Storage temperature

Notes: 1. Pulse width limited by safe operating area.

2. PW  5 s, duty cycle  1%

Symbol

VCES

VGES

IC

IC

ic(peak) Note1

iDF(peak) Note2

PC

j-c

j-c

Tj

Tstg

Ratings

600

±30

90

50

180

100

328.9

0.38

2.0

150

–55 to +150

(Tc = 25°C)

Unit

V

V

A

A

A

A

W

°C/W

°C/W

°C

°C

R07DS0237EJ0300 Rev.3.00

Jan 05, 2011

Page 1 of 7

Share Link: