RJH60D1DPE-00-J3(2009) Ver la hoja de datos (PDF) - Renesas Electronics

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RJH60D1DPE-00-J3
(Rev.:2009)

Silicon N Channel IGBT Application: Inverter

Renesas Electronics 

RJH60D1DPE

Silicon N Channel IGBT

Application: Inverter

Features

• High breakdown-voltage

• Low on-voltage

• Built-in diode

Outline

Preliminary

REJ03G1840-0100

Rev.1.00

Oct 14, 2009

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK (S)-(1) )

C

4

123

1. Gate

2. Collector

G

3. Emitter

4. Collecotor

E

Absolute Maximum Ratings

Item

Collector to emitter voltage / diode reverse voltage

Gate to emitter voltage

Collector current

Tc = 25°C

Tc = 100°C

Collector peak current

Collector to emitter diode forward current

Collector to Emitter diode forward peak current

Collector dissipation

Junction to case thermal impedance

Junction temperature

Storage temperature

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. Value at Tc = 25°C

Symbol

VCES / VR

VGES

IC

IC

ic(peak) Note1

iDF

iDF(peak) Note1

PC Note2

θj-c Note2

Tj

Tstg

Ratings

600

±30

16

8

32

8

32

70

1.79

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

A

W

°C/ W

°C

°C

REJ03G1840-0100 Rev.1.00 Oct 14, 2009

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