RJH60D0DPQ-A0
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
8
Ta = 25°C
Pulse Test
6
IC = 22 A
4
45 A
2
0
0
4
8
12 16 20
Gate to Emitter Voltage VGE (V)
Transfer Characteristics (Typical)
80
Ta = 25°C
60
150°C
40
20
VCE = 10 V
Pulse Test
0
0
4
8
12
16
Gate to Emitter Voltage VGE (V)
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
8
Ta = 150°C
Pulse Test
6
IC = 22 A
4
45 A
2
0
0
4
8
12 16 20
Gate to Emitter Voltage VGE (V)
Diode Forward Characteristics (Typical)
80
Ta = 25°C
60
150°C
40
20
VCE = 0 V
Pulse Test
0
0
1
2
3
4
Forward Voltege VF (V)
R07DS0526EJ0100 Rev.1.00
Aug 26, 2011
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