RJP60V0DPM-80
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ Max Unit
Test Conditions
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
ICES
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
—
—
1
—
—
±1
5.5
—
7.5
—
1.5
2.1
—
1.9
—
—
1080
—
—
58
—
—
42
—
μA VCE = 600 V, VGE = 0
μA VGE = ±30 V, VCE = 0
V
VCE = 10 V, IC = 1 mA
V
IC = 22 A, VGE = 15 V Note3
V
IC = 45 A, VGE = 15 V Note3
pF VCE = 25 V
pF
VGE = 0
pF f = 1 MHz
Total gate charge
Gate to emitter charge
Gate to collector charge
Qg
—
75
—
nC VGE = 15 V
Qge
—
10
—
nC VCE = 300 V
Qgc
—
45
—
nC IC = 22 A
Switching time
Short circuit withstand time
td(on)
—
45
—
ns VCE = 300 V, VGE = 15 V
tr
—
40
—
ns IC = 22 A
td(off)
—
100
—
ns Rg = 5 Ω
tf
—
70
—
ns Inductive load
tsc
—
6
—
μs VCC ≤ 360 V , VGE = 15 V
Tc = 100 °C
Notes: 3. Pulse test.
R07DS1036EJ0200 Rev.2.00
Apr 02, 2014
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