CR8PM Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
Número de pieza
componentes Descripción
Lista de partido
CR8PM
MITSUBISHI ELECTRIC
CR8PM Datasheet PDF : 5 Pages
| |||
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
32
28
24
θ = 30° 60° 90° 120°
20
16
180°
12
8
θθ
4
360°
0
RESISTIVE LOADS
0 2 4 6 8 10 12 14 16
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
32
28 θ
24 360°
90° 180°
RESISTIVE, θ = 30° 60° 120° 270°
20 INDUCTIVE
16 LOADS
DC
12
8
4
0
0 2 4 6 8 10 12 14 16
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR8PM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
140
θθ
120
360°
100
RESISTIVE LOADS
80
60
60° 120°
40 θ = 30°
90°
180°
20
0
0 2 4 6 8 10 12 14 16
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
140
θ
120
360°
RESISTIVE,
100
INDUCTIVE
80
LOADS
60
40
90° 180°
DC
20 θ = 30° 60° 120° 270°
0
0 2 4 6 8 10 12 14 16
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
160
Tj = 125°C
140
TYPICAL
EXAMPLE
120
IGT (25°C)
# 1 4.7mA
100
# 2 7.2mA
80
#2
60
40
#1
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
Feb.1999
Share Link: