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RT9232 Ver la hoja de datos (PDF) - Richtek Technology

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RT9232 Datasheet PDF : 14 Pages
First Prev 11 12 13 14
RT9232
ΔIL = (VIN VOUT) x
V OUT
(5)
VIN x fOSC x L
Generally, an inductor that limits the ripple current between
20% and 50% of output current is appropriate. Make sure
that the output inductor could handle the maximum output
current and would not saturate over the operation
temperature range.
Output Capacitor Selection
The output capacitors determine the output ripple voltage
(ΔVOUT) and the initial voltage drop after a high slew-rate
load transient. The selection of output capacitor depends
on the output ripple requirement. The output ripple voltage
is described as Equation (6).
ΔVOUT
=
ΔIL
x
ESR +
1
8
x
fO2SC
VOUT
x L x COUT
(1D)
(6)
For electrolytic capacitor application, typically 90~95%
of the output voltage ripple is contributed by the ESR of
output capacitors. Paralleling lower ESR ceramic capacitor
with the bulk capacitors could dramatically reduce the
equivalent ESR and consequently the ripple voltage.
Input Capacitor Selection
Use mixed types of input bypass capacitors to control
the input voltage ripple and switching voltage spike across
the MOSFETs. The buck converter draws pulsewise
current from the input capacitor during the on time of upper
MOSFET. The RMS value of ripple current flowing through
the input capacitor is described as:
IIN(RMS) = IOUT x D x (1D)
(7)
The input bulk capacitor must be cable of handling this
ripple current. Sometime, for higher efficiency the low ESR
capacitor is necessarily. Appropriate high frequency
ceramic capacitors physically near the MOSFETs
effectively reduce the switching voltage spikes.
MOSFET Selection
The selection of MOSFETs is based upon the
considerations of RDS(ON), gate driving requirements, and
thermal management requirements. The power loss of
upper MOSFET consists of conduction loss and switching
loss and is expressed as:
PUPPER = PCOND _UPPER + PSW_UPPER
(8)
= IOUT
x RDS(ON)
xD+
1
2
IOUT
x
VIN
x (TRISE
+ TFALL ) x
f OSC
where TRISE and TFALL are rising and falling time of VDS of
upper MOSFET respectively. RDS(ON) and QG should be
simultaneously considered to minimize power loss of upper
MOSFET.
The power loss of lower MOSFET consists of conduction
loss, reverse recovery loss of body diode, and conduction
loss of body diode and is express as:
PLOWER = PCOND _LOWER + PRR + PDIODE
(9)
= IOUT x RDS(ON) x (1D) + QRR x VIN x fOSC
+
1
2
x IOUT
x
VF
x
TDIODE
x
f OSC
where TDIODE is the conducting time of lower body diode.
Special control scheme is adopted to minimize body diode
conducting time. As a result, the RDS(ON) loss dominates
the power loss of lower MOSFET. Use MOSFET with
adequate RDS(ON) to minimize power loss and satisfy
thermal requirements.
Feedback Compensation
Figure 4 highlights the voltage-mode control loop for a
synchronous buck converter. Figure 5 shows the
corresponding Bode plot. The output voltage (VOUT) is
regulated to the reference voltage. The error amplifier EA
output (COMP) is compared with the oscillator (OSC)
sawtooth wave to provide a pulse-width modulated (PWM)
wave with an amplitude of VIN at the PHASE node. The
PWM wave is smoothed by the output filter (L and COUT).
The modulator transfer function is the small-signal transfer
function of VOUT/COMP. This function is dominated by a
DC gain and the output filter (L and COUT), with a double
pole break frequency at FP_LC and a zero at FZ_ESR. The
DC gain of the modulator is simply the input voltage (VIN)
divided by the peak-to-peak oscillator voltage ΔVOSC.
The break frequency FLC and FESR are expressed as
Equation (10) and (11) respectively.
FP_LC = 2π
1
LCOUT
(10)
FZ_ESR
=
2π
1
x ESR
x COUT
(11)
DS9232-06 March 2007
www.richtek.com
11

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