RUR660 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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RUR660 Datasheet PDF : 5 Pages
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RURD660, RURD660S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
VF
IF = 6A
IF = 6A, TC = 150oC
-
-
1.5
V
-
-
1.2
V
IR
VR = 600V
-
VR = 600V, TC = 150oC
-
-
100
µA
-
500
µA
trr
IF = 1A, dIF/dt = 200A/µs
-
-
55
ns
IF = 6A, dIF/dt = 200A/µs
-
-
60
ns
ta
IF = 6A, dIF/dt = 200A/µs
-
28
-
ns
tb
IF = 6A, dIF/dt = 200A/µs
-
16
-
ns
QRR
IF = 6A, dIF/dt = 200A/µs
-
150
-
nC
CJ
RθJC
VR = 10V, IF = 0A
-
25
-
pF
-
-
3
oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
30
10
100oC
175oC
1
25oC
0.5
0
0.5
1
1.5
2
2.5
VF, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
500
175oC
100
10
100oC
1
0.1
25oC
0.01
0.001
0
100
200
300
400
500
600
VR, REVERSE VOLTAGE (V)
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RURD660, RURD660S Rev. B
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