T1440 Ver la hoja de datos (PDF) - SANYO -> Panasonic

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T1440

N-Channel Silicon MOSFET

SANYO -> Panasonic 

Electrical Characteristics at Ta=25°C

SFT1440

Parameter

Symbol

Conditions

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ID=10mA, VGS=0V

VDS=480V, VGS=0V

VGS=±24V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=0.8A

ID=0.8A, VGS=10V

VDS=30V, f=1MHz

VDS=30V, f=1MHz

VDS=30V, f=1MHz

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

VDS=300V, VGS=10V, ID=1.5A

VDS=300V, VGS=10V, ID=1.5A

VDS=300V, VGS=10V, ID=1.5A

IS=1.5A, VGS=0V

Switching Time Test Circuit

VIN

10V

0V

VIN

PW=10μs

D.C.≤1%

G

VDD=200V

ID=0.8A

RL=250Ω

D

VOUT

SFT1440

P.G

50Ω

S

Ratings

Unit

min

typ

max

600

V

100

μA

±10

μA

3.0

5.0

V

1.0

S

6.2

8.1

Ω

130

pF

25

pF

4.0

pF

9.1

ns

15

ns

18

ns

19

ns

6.3

nC

1.4

nC

3.6

nC

0.85

1.2

V

ID -- VDS

2.0

1.8

8V

1.6

15V

7V

1.4

1.2

1.0

0.8

0.6

6V

0.4

0.2

VGS=5V

0

0 2 4 6 8 10 12 14 16 18 20

Drain-to-Source Voltage, VDS -- V IT15875

2.0

VDS=10V

1.8

1.6

ID -- VGS

25°C

1.4

75°C

1.2

1.0

0.8

0.6

0.4

0.2

0

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Gate-to-Source Voltage, VGS -- V IT15876

No. A1816-2/4

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