SKB10N60A(2002) Ver la hoja de datos (PDF) - Infineon Technologies

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SKB10N60A
(Rev.:2002)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKP10N60A, SKB10N60A

SKW10N60A

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower Eoff compared to previous generation

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

• Very soft, fast recovery anti-parallel EmCon diode

P-TO-220-3-1

(TO-220AB)

C

G

E

P-TO-263-3-2 (D²-PAK) P-TO-247-3-1

(TO-263AB)

(TO-247AC)

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

VCE

IC

VCE(sat)

Tj

Package

SKP10N60A

600V 10A

2.3V

150°C TO-220AB

SKB10N60A

TO-263AB

SKW10N60A

TO-247AC

Maximum Ratings

Parameter

Symbol

Collector-emitter voltage

DC collector current

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area

VCE ≤ 600V, Tj ≤ 150°C

Diode forward current

TC = 25°C

TC = 100°C

Diode pulsed current, tp limited by Tjmax

Gate-emitter voltage

Short circuit withstand time1)

VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C

Power dissipation

TC = 25°C

Operating junction and storage temperature

VCE

IC

ICpuls

-

IF

IFpuls

VGE

tSC

Ptot

Tj , Tstg

Ordering Code

Q67040-S4458

Q67040-S4459

Q67040-S4506

Value

SKP10N60A

SKB10N60A

SKW10N60A

600

20

10.6

40

40

Unit

V

A

21

10

42

±20

V

µs

10

W

92

-55...+150

°C

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

1

Sep-02

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