SKW30N60 Ver la hoja de datos (PDF) - Infineon Technologies
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SKW30N60
Infineon Technologies
SKW30N60 Datasheet PDF : 13 Pages
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SKW30N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=30A,
VGE=0/15V,
R G =11Ω ,
Lσ1) =180nH,
Cσ1) =900pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=200V, IF=30A,
diF/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
44
34
291
58
0.64
0.65
1.29
400
32
368
610
5.5
180
Unit
max.
53 ns
40
349
70
0.77 mJ
0.85
1.62
- ns
-
-
- nC
-A
- A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150°C
VCC=400V,IC=30A,
VGE=0/15V,
RG= 11Ω,
Lσ1) =180nH,
Cσ1) =900pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150°C
VR=200V, IF=30A,
diF/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
44
34
324
67
0.98
0.92
1.90
520
56
464
1740
9.0
200
Unit
max.
53 ns
40
389
80
1.18 mJ
1.19
2.38
- ns
-
-
- nC
-A
- A/µs
1) Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Jul-02
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