SMG12C60F
Gate Characteristics
10
VFGM(6V)
1
25℃
PGM(5W)
PG(AV() 0.5W)
0.1
1
VG(D 0.2V)
10
100
1000
Gate Curren(t mA)
10000
Average On-State Current vs Power
Dissipation(Single phase half wave)
20
θ=180゜
15
θ=120゜
θ=90゜
θ=60゜
10
θ=30゜
π
5
0
2π
θ
360゜
θ:Conduction Angle
0
0
2
4
6
8 10 12 14
Average On-State Curren(t A)
Surge On-State Current Rating(Non-Repetitive)
200
On-State Voltage Max
1000
Tj=25℃
Tj=125℃
100
10
1
0.5
1
1.5
2
2.5
3
3.5
On-State Voltage(V)
Average On-State Current vs Ambient
Temperature(Single phase half wave)
130
120
110
π
0
2π
θ
360゜
θ:Conduction Angle
100
90
80
70
60
50
0
θ=30゜ θ=60゜ θ=90゜ θ=120゜ θ=180゜
2
4
6
8
10 12 14
Average On-State Curren(t A)
Maximum Transient Thermal
Impedance Characteristics
10
150
100
50
60Hz
50Hz
0
1
10
100
Time(Cycles)
IGT −T[j Change Rate](Typical)
1000
100
10
−50 −25
0 25 50 75 100 125
Junction Temp(. ℃)
1
0.1
0.01
0.1
1
10
Time(sec.)
100
VGT −T(j Typical)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
−50 −25
0 25 50 75
Junction Temp(. ℃)
100 125
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com