SMS05T1(2002) Ver la hoja de datos (PDF) - ON Semiconductor
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SMS05T1 Datasheet PDF : 4 Pages
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SMS05T1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
QVBR
IF
VF
ZZT
IZK
ZZK
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR
Forward Current
Forward Voltage @ IF
Maximum Zener Impedance @ IZT
Reverse Current
Maximum Zener Impedance @ IZK
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni–Directional
ELECTRICAL CHARACTERISTICS – UNIDIRECTIONAL
Device
Device
Marking
Breakdown
Voltage
VBR(V)
IT
Min Nom Max (mA)
Max
Reverse
Leakage
Current
IR VR
(mA) (V)
Max Reverse Voltage
(Clamping Voltage)
At Specified Reverse
Surge Current (IRSM)
IRSM
VRSM
(8x20 ms) (8x20 ms)
(A)
(V)
SMS05T1 5V0
6.0 – 7.2 1.0 20 5.0
5.0
9.8
SMS12T1 12V 13.3 – 15 1.0 1.0 12
5.0
19.0
SMS15T1 15V 16.7 – 18.5 1.0 1.0 15
5.0
24.0
SMS24T1 24V 26.7 – 32 1.0 1.0 24
5.0
40.0
Max Reverse Voltage
(Clamping Voltage)
At Specified Reverse
Surge Current (IRSM)
IRSM
VRSM
(8x20 ms) (8x20 ms)
(A)
(V)
23
15.5
15
23.0
12
29.0
8
44.0
Capacitance
@ 0 Volt Bias,
1 MHz
(pF)
Min
Max
250
400
80
150
60
125
40
75
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