UT62L12816 Ver la hoja de datos (PDF) - Utron Technology Inc
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UT62L12816 Datasheet PDF : 14 Pages
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Rev. 1.4
UTRON
UT62L12816
128K X 16 BIT LOW POWER CMOS SRAM
DATA RETENTION CHARACTERISTICS (TA = 0℃ to 70℃ / -20℃ to 85℃(E))
PARAMETER
Vcc for Data Retention
Data Retention Current
Chip Disable to Data
Retention Time
Recovery Time
SYMBOL
VDR
IDR
tCDR
tR
TEST CONDITION
CE ≧ VCC-0.2V
Vcc=1.5V
-L
CE ≧ VCC-0.2V - LL
See Data Retention
Waveforms (below)
MIN.
1.5
-
-
0
5
TYP.
-
1
0.5
-
-
MAX.
3.6
50
20
-
-
UNIT
V
µA
µA
ms
ms
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1) ( CE controlled)
VCC
CE
Vcc(min.)
tCDR
VIH
VDR ≧ 1.5V
CE ≧ VCC-0.2V
Vcc(min.)
tR
VIH
Low Vcc Data Retention Waveform (2) ( LB , UB controlled)
VCC
LB,UB
Vcc(min.)
tCDR
VIH
VDR ≧ 1.5V
LB,UB ≧ VCC-0.2V
Vcc(min.)
tR
VIH
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
9
P80050
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