UTRON
UT62W1024
Rev. 1.0
128K X 8 BIT WIDE RANGE LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS (Ⅱ) (VCC = 4.5V~5.5V, Vss=0V, TA = 0℃ to 70℃)
PARAMETER
SYMBOL TEST CONDITION
MIN. TYP. MAX. UNIT
Input High Voltage
VIH
Input Low Voltage
VIL
Input Leakage Current IIL
Output Leakage Current IOL
VSS ≦VIN ≦VCC
VSS ≦VI/O≦VCC
CE 1 =VIH or CE2 = VIL or
2.2
- 0.5
-1
- VCC+0.5 V
-
0.8
V
-
1
µA
-1 -
1
µA
OE = VIH or WE = VIL
Output High Voltage
VOH
Output Low Voltage
VOL
Average Operating
ICC
Power Supply Courrent
IOH = - 1mA
2.4 -
-
V
IOL= 4mA
-
-
0.4
V
Cycle time =Min. 100% Duty, -35 - 60 100 mA
CE 1 =VIL, CE2 = VIH,
-55 - 50 85 mA
, CL=100PF
-70 - -40 70 mA
Standby Power
Supply Current
ICC1
Cycle time = 1µs, 100% Duty,
. CE 1 ≦0.2V,CE2≧VCC-0.2V,
-
-
5 mA
II/O = 0mA
ISB
CE 1 =VIH or CE2 = VIL
-
-
1.0 mA
ISB1
CE 1 ≧VCC-0.2V or
.CE2≦0.2V
100
- L - 2.5 20* µA
-
LL
-
0.5
40
10*
µA
*Those parameters are for reference only under 50℃
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
3
P80056