SPA20N60CFD(2006) Ver la hoja de datos (PDF) - Infineon Technologies
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SPA20N60CFD Datasheet PDF : 12 Pages
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CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC0) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS
R DS(on),max
I
1)
D
SPA20N60CFD
600 V
0.22 Ω
20.7 A
PG-TO220-3-31
Type
SPA20N60CFD
Package
Ordering Code Marking
PG-TO220-3-31 SP000216361 20N60CFD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse
Symbol Conditions
ID
T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS
I D=10 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E AR
I D=20 A, V DD=50 V
Avalanche
current,
repetitive
t
2),3)
AR
I AR
Drain source voltage slope
dv /dt
I D=20.7 A,
V DS=480 V, T j=125 °C
Reverse diode dv /dt
dv /dt
Maximum diode commutation speed di /dt
Gate source voltage
V GS
I S=20.7 A, V DS=480 V,
T j=125 °C
static
AC (f >1 Hz)
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
Rev. 1.2
page 1
Value
20.7
13.1
52
690
1
20
80
40
900
±20
±30
35
-55 ... +150
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
2006-05-15
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