SSM9922EO Ver la hoja de datos (PDF) - Silicon Standard Corp.
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SSM9922EO Datasheet PDF : 5 Pages
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SSM9922(G)EO
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
∆ BV DSS/ ∆ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=2.5V, ID=4A
VDS=VGS, ID=1mA
VDS=4.5V, ID=6A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS=±12V
ID=6A
VDS=16V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω , VGS=4.5V
RD=15 Ω
VGS=0V
VDS=20V
f=1.0MHz
Gate Resistance
f=1.0MHz
20 -
-
V
- 0.05 - V/°C
-
- 15 mΩ
-
- 20 mΩ
0.5 - 1.2 V
- 22 -
S
-
- 25 uA
-
- 100 uA
-
- ±10 uA
- 25 40 nC
-
3
- nC
-
9
- nC
- 11 - ns
- 12 - ns
- 47 - ns
- 23
-
ns
- 1730 2770 pF
- 280 - pF
- 240 - pF
- 2.2 -
Ω
Source-Drain Diode
Symbol
Parameter
VSD
Forward On Voltage2
trr
Reverse Recovery Time2
Qrr
Reverse Recovery Charge
Test Conditions
IS=0.84A,VGS=0V
IS=6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 24 - ns
- 18 - nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208°C/W when mounted on min. copper pad.
Rev.2.01 12/06/2004
www.SiliconStandard.com
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