SSM9960GH Ver la hoja de datos (PDF) - Silicon Standard Corp.
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SSM9960GH Datasheet PDF : 5 Pages
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SSM9960(G)H,J
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
∆ BV DSS/∆ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=20A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=18A
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=40V, VGS=0V
VDS=32V ,VGS=0V
VGS= ± 20V
ID=20A
VDS=20V
VGS=4.5V
VDS=20V
ID=20A
RG=3.3Ω , VGS=10V
RD=1Ω
VGS=0V
VDS=25V
f=1.0MHz
40 -
-
V
- 0.032 - V/°C
-
- 16 mΩ
-
- 25 mΩ
1
-
3
V
- 30 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 18 - nC
-
6
- nC
- 12 - nC
-
9
- ns
- 110 - ns
- 23 - ns
-
10
- ns
- 1500 - pF
- 250 - pF
- 180 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=20A, VGS=0V
dI/dt = 100A/us
Min. Typ. Max. Units
-
- 1.3 V
- 22 - ns
- 27.4 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
11/16/2004 Rev.2.1
www.SiliconStandard.com
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