STB100NF03L-03-1(2006) Ver la hoja de datos (PDF) - STMicroelectronics

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STB100NF03L-03-1
(Rev.:2006)

N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220 STripFET™ III Power MOSFET

STMicroelectronics 

STB100NF03L-03 - STB100NF03L-03-1 - STP100NF03L-03

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

VDGR

VGS

ID(1)

ID(1)

IDM(2)

Ptot

EAS (3)

Tstg

Tj

Drain-source voltage (VGS = 0)

Drain-gate voltage (RGS = 20 kΩ)

Gate- source voltage

Drain current (continuous) at

TC = 25°C

Drain current (continuous) at

TC = 100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating Factor

Single pulse avalanche energy

Storage temperature

Max. operating junction

temperature

1. Value limited by wire bonding

2. Pulse width limited by safe operating area.

3. Starting Tj = 25 °C, ID = 50A, VDD = 50V

Value

30

24

± 16

100

100

400

300

2

1.9

-55 to 175

Table 2. Thermal data

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

TJ

Maximum lead temperature for soldering purpose

Unit

V

V

V

A

A

A

W

W/°C

J

°C

0.5

°C/W

62.5

°C/W

300

°C

3/15

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