STB100NF03L-03T4(2006) Ver la hoja de datos (PDF) - STMicroelectronics

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Lista de partido

STB100NF03L-03T4
(Rev.:2006)

N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220 STripFET™ III Power MOSFET

STMicroelectronics 

STB100NF03L-03 - STB100NF03L-03-1 - STP100NF03L-03

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 100A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 100A,

di/dt = 100A/µs,

VDD = 20V, Tj = 150°C

(see Figure 15)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

100 A

400 A

1.3 V

75

ns

150

nC

4

A

5/15

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