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STB100NF03L-03T4

N-CHANNEL POWER MOSFET

STMicroelectronics 

STB100NF03L-03 STP100NF03L-03

STB100NF03L-03-1

N-CHANNEL 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220

STripFET™ II POWER MOSFET

TYPE

VDSS RDS(on)

ID

STB100NF03L-03

STP100NF03L-03

STB100NF03L-03-01

30 V

30 V

30 V

<0.0032 Ω

<0.0032 Ω

<0.0032 Ω

100 A

100 A

100 A

s TYPICAL RDS(on) = 0.0026 Ω

s LOW THRESHOLD DRIVE

s 100% AVALANCHE TESTED

s LOGIC LEVEL DEVICE

s THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1")

s SURFACE-MOUNTING D2PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

3

1

D2PAK

TO-263

(Suffix “T4”)

123

I2PAK

TO-262

(Suffix “-1”)

3

2

1

TO-220

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s HIGH CURRENT, HIGH SWITCHING SPEED

s MOTOR CONTROL, AUDIO AMPLIFIERS

s DC-DC & DC-AC CONVERTERS

s SOLENOID AND RELAY DRIVERS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID(1)

Drain Current (continuous) at TC = 25°C

ID(1)

Drain Current (continuous) at TC = 100°C

IDM(•) Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

Derating Factor

EAS(2) Single Pulse Avalanche Energy

Tstg

Storage Temperature

Tj

Operating Junction Temperature

(•) Pulse width limited by safe operating area

(1) Current Limited by Package

February 2003

.

INTERNAL SCHEMATIC DIAGRAM

Value

30

30

± 16

100

100

400

300

2

1.9

-55 to 175

(2) Starting Tj = 25 oC, IAR = 50A, VDD = 50V

Unit

V

V

V

A

A

A

W

W/°C

J

°C

1/11

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