STB80NE03L-06 Ver la hoja de datos (PDF) - STMicroelectronics

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STB80NE03L-06

N-channel 30V - 0.005Ω - 85A - D2PAK STripFET™ Power MOSFET

STMicroelectronics 

STB80NE03L-06

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

VDGR

VGS

ID

ID

IDM (1)

Drain-source voltage (VGS = 0)

Drain-gate voltage (RGS = 20 kΩ)

Gate-source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Derating factor

PTOT

dv/dt (2)

Total dissipation at TC = 25°C

Peak diode recovery voltage slope

TJ

Operating junction temperature

Tstg Storage temperture

1. Pulse width limited by safe operating area

2. ISD < 20A, di/dt < 100A/µs, VDD = 80% V(BR)DSS

Table 2. Thermal resistance

Symbol

Parameter

RthJC

RthJA

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Maximum lead temperature for soldering

purpose

Table 3. Avalanche characteristics

Symbol

Parameter

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

Single pulse avalanche energy

EAS

(starting Tj=25°C, Id=Iar, Vdd=50V)

Electrical ratings

Value

30

30

± 20

80

60

320

1

150

7

-55 to 175

Unit

V

V

V

A

A

A

W

V/ns

°C

Value

1

62.5

300

Unit

°C/W

°C/W

°C

Max Value

Unit

80

A

600

mJ

3/13

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