STI14NM65N Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Lista de partido

STI14NM65N

N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STB/F/I/P/W14NM65N

(TCASE=25°C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Drain-source

V(BR)DSS breakdown voltage

ID = 1 mA, VGS = 0

650

V

dv/dt (1) Drain source voltage slope

VDD = 520 V, ID=12 A,

VGS=10 V

30

V/ns

Zero gate voltage

IDSS drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, @125 °C

1 µA

100 µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±100 nA

VGS(th) Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 6 A

0.330 0.380 Ω

1. Characteristic value at turn off on inductive load

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS=15 V, ID = 6A

VDS = 50 V, f = 1 MHz,

VGS = 0

10

S

1300

pF

90

pF

8

pF

Coss

(2)

eq

Equivalent output

capacitance

VGS = 0, VDS = 0 to 520 V

150

pF

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 520 V, ID = 12 A,

VGS = 10 V,

(see Figure 19)

45

nC

7

nC

25

nC

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

4/18

Share Link: