B14NK60Z Ver la hoja de datos (PDF) - STMicroelectronics

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B14NK60Z

N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

VDGR

VGS

ID

ID

IDM(2)

PTOT

Drain-source voltage (VGS = 0)

Drain-gate voltage (RGS = 20KΩ)

Gate-source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC=100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

VESD(G-S)

dv/dt(3)

Gate source ESD (HBM-C= 100pF, R=

1.5kΩ)

Peak diode recovery voltage slope

VISO

TJ

Tstg

Insulation withstand voltage (DC)

Operating junction temperature

Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤13.5A, di/dt ≤200A/µs, VDD≤V(BR)DSS, Tj ≤TJMAX.

Value

TO-220/D²PAK/I²PAK

Unit

TO-220FP

TO-247

600

600

± 30

13.5

8.5

54

160

1.28

13.5(1)

8.5(1)

54 (1)

40

0.32

V

V

V

A

A

A

W

W/°C

4000

V

4.5

--

2500

V/ns

V

-55 to 150

°C

Table 2. Thermal data

Value

Symbol

Parameter

TO-220/D²PAK/I²PAK

Unit

TO-220FP

TO-247

Rthj-case

Rthj-a

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient

Max

Maximum lead temperature for soldering

purpose

0.78

62.5

300

3.1

°C/W

50

°C/W

°C

3/19

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