STP60NF10(2004) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Lista de partido

STP60NF10
(Rev.:2004)

N-CHANNEL 100V - 0.019
- 80A TO-220 STripFET™ II POWER MOSFET

STMicroelectronics 

STP60NF10

UhiyrÃ#)ÃTHERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

0.5

Rthj-amb Thermal Resistance Junction-ambient

Max

62.5

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C/W

°C/W

°C

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

UhiyrÃ$)ÃOFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

100

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20 V

±100

nA

UhiyrÃ%)ÃON (*)

Symbol

Parameter

VGS(th) Gate Threshold Voltage

RDS(on)

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

ID = 40 A

Min.

2

Typ.

3

0.019

Max.

4

0.023

Unit

V

W

UhiyrÃ&)ÃDYNAMIC

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

gfs (*)

Forward Transconductance VDS = 25 V

ID = 40 A

78

S

Ciss

Input Capacitance

VDS = 25V f = 1 MHz VGS = 0

4270

pF

Coss

Output Capacitance

470

pF

Crss

Reverse Transfer

140

pF

Capacitance

2/9

Share Link: