B60NF10(2005) Ver la hoja de datos (PDF) - STMicroelectronics

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B60NF10
(Rev.:2005)

N-CHANNEL 100V - 0.019 Ω - 80A D²PAK/TO-220 STripFET™ II POWER MOSFET

STMicroelectronics 

STB60NF10 STP60NF10

Table 4: THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

0.5

Rthj-amb Thermal Resistance Junction-ambient

Max

62.5

Tl

Maximum Lead Temperature For Soldering Purpose

300

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

Table 5: OFF

Symbol

Parameter

Test Conditions

Min. Typ.

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

100

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20 V

°C/W

°C/W

°C

Max. Unit

V

1

µA

10

µA

±100

nA

Table 6: ON (*)

Symbol

Parameter

VGS(th) Gate Threshold Voltage

RDS(on)

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

ID = 40 A

Min.

2

Typ.

3

0.019

Max.

4

0.023

Unit

V

Ω

Table 7: DYNAMIC

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

gfs (*)

Forward Transconductance VDS = 25 V

ID = 40 A

78

S

Ciss

Input Capacitance

VDS = 25V f = 1 MHz VGS = 0

4270

pF

Coss

Output Capacitance

470

pF

Crss

Reverse Transfer

140

pF

Capacitance

2/10

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